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IS733H
A.C. INPUT PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS
APPROVALS l UL recognised, File No. E91231
'X' SPECIFICATION APPROVALS l VDE 0884 approval pending
l
EN60950 approval pending
DESCRIPTION The IS733H optically coupled isolator consists of two infrared light emitting diodes connected in inverse parallel and NPN silicon photo transistor in a standard 6 pin dual in line plastic package.
ABSOLUTE MAXIMUM RATINGS (25C unless otherwise specified) Storage Temperature -55C to + 150C Operating Temperature -55C to + 100C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260C INPUT DIODE Forward Current Peak forward current Power Dissipation OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Collector-base Voltage BVCBO Emitter-collector Voltage BVECO Emitter-base Voltage BVEBO Power Dissipation POWER DISSIPATION Total Power Dissipation 320mW (derate linearly 4.27mW/C above 25C) 35V 35V 6V 6V 160mW 150mA 1A 230mW
FEATURES l Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l AC or polarity insensitive input l All electrical parameters 100% tested l Custom electrical selections available APPLICATIONS l Computer terminals l Industrial systems controllers l Telephone sets, Telephone exchangers l Signal transmission between systems of different potentials and impedances
ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581
9/6/97
ISOCOM INC 720 E., Park Boulevard, Suite 104, Plano, TX 75074 USA Tel: (972) 423-5521 Fax: (972) 422-4549
DB92067-AAS/A1
ELECTRICAL CHARACTERISTICS ( TA = 25C Unless otherwise noted ) PARAMETER Input Forward Voltage (VF) Collector-emitter Breakdown (BVCEO) ( note 2 ) Collector-base Breakdown (BVCBO) Emitter-base Breakdown (BVEBO) Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) Current Transfer Ratio (CTR) (note 2 ) 35 35 6 6 100 15 300 MIN TYP MAX UNITS 1.2 1.4 V TEST CONDITION IF = 20mA IC = 1mA IC = 100A IE = 100A IE = 100A VCE = 20V 1mAIF , 5V V CE
Output
V V V V nA %
Coupled
Collector-emitter Saturation VoltageVCE(SAT)
0.2
V
20mAIF , 1mAIC
Input to Output Isolation Voltage VISO Input-output Isolation Resistance RISO Output Rise Time Output Fall Time tr tf
5300 7500 5x1010
VRMS VPK s s
See note 1 See note 1 VIO = 500V (note 1) VCE = 2V , IC= 2mA, R L = 100
4 3
18 18
Note 1 Note 2
Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory.
9/6/97
DB92067-AAS/A2
Collector Power Dissipation vs. Ambient Temperature 200 Collector power dissipation PC (mW) Collector-emitter saturation voltage VCE(SAT) (V) 6 5 4 3 2 1 0 0
Collector-emitter Saturation Voltage vs. Forward Current =1mA 2mA 3mA 5mA 8mA
150
100
50
0 -30 0 25 50 75 100 125 Ambient temperature TA ( C ) Forward Current vs. Ambient Temperature 60
Ic
TA = 25C
5
10
15
Forward current IF (mA) Collector Current vs. Collector-emitter Voltage 50 TA = 25C 50 30 20 15 20 10 0 10 IF = 5mA
Forward current IF (mA)
50 Collector current IC (mA) -30 0 25 50 75 100 125 40 30 40 30 20 10 0 Ambient temperature TA ( C ) Collector-emitter Saturation Voltage vs. Ambient Temperature 0.14 IF = 20mA IC = 1mA Current transfer ratio CTR (%) 0.12 0.10 0.08 0.06 0.04 0.02 0 -30 0 25 50 75 100 Ambient temperature TA ( C )
0
2
4
6
8
10
Collector-emitter voltage VCE ( V ) Current Transfer Ratio vs. Forward Current 320 280 240 200 160 120 80 40 0 1 2 5 10 20 50 Forward current IF (mA)
DB92067-AAS/A2
Collector-emitter saturation voltage VCE(SAT) (V)
VCE = 5V TA = 25C
9/6/97

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